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ccd area image sensors 512 512 pixels, back-thinned fft-ccd s7170-0909 S7171-0909-01 www.hamamatsu.com 1 512 512 pixel format scienti ? c measuring instrument wide spectrum range semiconductor inspection low readout noise uv imaging wide dynamic range bio-photon observation mpp operation non-cooled type: s7170-0909 one-stage te-cooled type: S7171-0909-01 greater than 90% quantum efficiency at peak sensitivity wavelength selection guide structure type no. cooling number of total pixels number of effective pixels image size [mm (h) mm (v)] suitable multichannel detector head s7170-0909 non-cooled 532 520 512 512 12.288 12.288 c7180 S7171-0909-01 one-stage te-cooled c7181 note: two-stage te-cooled type (s7172-0909) is also available. parameter s7170-0909 S7171-0909-01 pixel size 24 (h) 24 (v) ? m vertical clock phase 2 phases horizontal clock phase 2 phases output circuit one-stage mosfet source follower package 24-pin ceramic dip (refer to dimensional outlines) window sapphire * 1 ar-coated sapphire * 1: window-less type (ex. s7170-0909n) is available upon request. (temporary window is ? xed by tape to protect the ccd chip and wire bonding.) hamamatsu developed mpp (multi-pinned phase) mode back-thinned fft-ccds s7170-0909, S7171-0909-01 speci ? cally designed for low-light-level detection in scienti ? c applications. the s7170-0909, S7171-0909-01 have sensitivity from the uv to near-ir as well as having low dark current and wide dynamic range. stability of the spectral response curve is also achieved for high precision measurements. either one-stage or two-stage thermoelectric cooler is built into the package (S7171-0909-01, s7172-0909). at room tem- perature operation, the device can be cooled down to -10 c by one-stage cooler and -30 c by two-stage cooler, respec- tively. in addition since both the ccd chip and the thermoelectric cooler are hermetically sealed, no dry air is required, thus allowing easy handling. features applications
ccd area image sensors s7170-0909, S7171-0909-01 2 absolute maximum ratings (ta=25 c unless otherwise noted) electrical characteristics (ta=25 c) operating conditions (mpp mode, ta=25 c) parameter symbol min. typ. max. unit operating temperature * 2 to p r - 5 0 - + 5 0 c storage temperature tstg -50 - +70 c output transistor drain voltage v od -0.5 - +25 v reset drain voltage v rd -0.5 - +18 v vertical input source voltage v isv -0.5 - +18 v horizontal input source voltage v ish -0.5 - +18 v vertical input gate voltage v ig1v , v ig2v -10 - +15 v horizontal input gate voltage v ig1h , v ig2h -10 - +15 v summing gate voltage v sg -10 - +15 v output gate voltage v og -10 - +15 v reset gate voltage v rg -10 - +15 v transfer gate voltage v tg -10 - +15 v vertical shift register clock voltage v p1v , v p2v -10 - +15 v horizontal shift register clock voltage v p1h , v p2h -10 - +15 v * 2: package temperature (s7170-0909), chip temperature (S7171-0909-01) parameter symbol min. typ. max. unit signal output frequency fc - - 1 mhz vertical shift register capacitance c p1v , c p2v - 6400 - pf horizontal shift register capacitance c p1h , c p2h - 120 - pf summing gate capacitance c sg -30-pf reset gate capacitance c rg -30-pf transfer gate capacitance c tg -70-pf charge transfer ef ? ciency * 3 cte 0.99995 0.99999 -- dc output level vout 14 16 18 v output impedance zo - 3 4 k : power consumption * 4 p - 13 14 mw * 3: charge transfer ef ? ciency per pixel, measured at half of the full well capacity * 4: power consumption of the on-chip ampli ? er plus load resistance parameter symbo min. typ. max. unit output transistor drain voltage v od 18 20 22 v reset drain voltage v rd 11.5 12 12.5 v output gate voltage v og 135v substrate voltage v ss -0-v test point vertical input source voltage v isv -v rd -v horizontal input source voltage v ish -v rd -v vertical input gate voltage v ig1v , v ig2v -9 -8 - v horizontal input gate voltage v ig1h , v ig2h -9 -8 - v vertical shift register clock voltage high v p1vh , v p2vh 468 v low v p1vl , v p2vl -9 -8 -7 horizontal shift register clock voltage high v p1hh , v p2hh 468 v low v p1hl , v p2hl -9 -8 -7 summing gate voltage high v sgh 468 v low v sgl -9 -8 -7 reset gate voltage high v rgh 468 v low v rgl -9 -8 -7 transfer gate voltage high v tgh 468 v low v tgl -9 -8 -7 external load resistance r l 20 22 24 k :
ccd area image sensors s7170-0909, S7171-0909-01 3 spectral response (without window) * 13 quantum efficiency (%) wavelength (nm) (typ. ta=25 c) 0 200 400 600 800 1000 1200 10 20 30 40 50 60 70 80 90 100 front-illuminated ccd front-illuminated ccd (uv coated) back-thinned ccd kmpdb0058eb * 13: spectral response is decreased according to the spectral transmittance characteristic of window material. electrical and optical characteristics (ta=25 c unless otherwise noted) parameter symbol min. typ. max. unit saturation output voltage vsat - fw sv - v full well capacity vertical fw 240 320 - ke - horizontal * 5 300 600 - ccd node sensitivity sv 1.8 2.2 - ? v/e - dark current * 6 (mpp mode) 25 c ds - 100 1000 e - /pixel/s 0 c - 10 100 readout noise * 7 nr - 8 16 e - rms dynamic range * 8 line binning dr 37500 75000 - - area scanning 30000 40000 - - photo response non-uniformity * 9 prnu - 3 10 % spectral response range o - 200 to 1100 - nm blemish point defect * 10 white spots - --0- black spots - - 10 - cluster defect * 11 --3- column defect * 12 --0- * 5: the linearity is 1.5%. * 6: dark current nearly doubles for every 5 to 7 c increase in temperature. * 7: measured with a hamamatsu c4880 digital ccd camera with a cds circuit (sensor temperature: -40 c, operating frequency: 150 khz) * 8: dynamic range = full well capacity / readout noise * 9: measured at half of the full well capacity, using led light (peak emission wavelength: 560 nm) fixed pattern noise (peak to peak) signal 100 [%] photo response non-uniformity (prnu) = * 10: white spots pixels whose dark current is higher than 1 ke - after one-second integration at 0 c black spots pixels whose sensitivity is lower than one-half of the average pixel output (measured with uniform light producing one-half of the saturation charge) * 11: 2 to 9 contiguous defective pixels * 12: 10 or more contiguous defective pixels
ccd area image sensors s7170-0909, S7171-0909-01 spectral transmittance characteristic of window material 0 10 100 200 wavelength (nm) transmittance (%) 300 400 500 600 700 800 900 1000 20 30 40 50 60 70 80 90 100 (typ. ta=25 c) ar-coated sapphire sapphire kmpdb0102eb type no. window material s7170-0909 sapphire * 14 (option: windowless) s7172-0909 (two-stage te- cooled type) S7171-0909-01 ar-coated sapphire * 14 (option: windowless) * 14: hermetic sealing window material dark current vs. temperature -50 -40 -30 -20 0 -10 10 20 30 temperature (c) 0.01 1 0.1 10 100 1000 dark current (e - /pixel/s) (typ.) kmpdb0256ea 4
ccd area image sensors s7170-0909, S7171-0909-01 device structure (conceptual drawing of top view) kmpdc0075ea 5 23 22 21 20 14 15 24 1 2 12 11 89 3 4 5 512 signal out 4 blank pixels 4 blank pixels thinning thinning 1 2 3 4 2 3 4 5 v h 8-bevel 4-bevel 512 signal out 13 10 v=512 h=512 5 4-bevel 4-bevel
ccd area image sensors s7170-0909, S7171-0909-01 6 area scanning (large full well mode) timing chart parameter symbol min. typ. max. unit p1v, p2v, tg * 15 pulse width tpwv 6 8 - ? s rise and fall times tprv, tpfv 200 - - ns p1h, p2h * 15 pulse width tpwh 500 2000 - ns rise and fall times tprh, tpfh 10 - - ns duty ratio - 40 50 60 % sg pulse width tpws 500 2000 - ns rise and fall times tprs, tpfs 10 - - ns duty ratio - 40 50 60 % rg pulse width tpwr 100 - - ns rise and fall times tprr, tpfr 5 - - ns tg - p1h overlap time tovr 3 - - ? s * 15: symmetrical clock pulses should be overlapped at 50% of maximum amplitude. integration period (shutter has to be open) p1v rg os p2v, tg p1h p2h, sg readout period (shutter has to be closed) enlarged view 4..519 520 512 + 8 (bevel) tpwv tov r tpwr d1 d2 d3 d4 d18 d19 d20 d5..d12, s1..s512, d13..d17 p2v, tg p1h p2h, sg rg os tpwh, tpws 123 kmpdc0120ea
ccd area image sensors s7170-0909, S7171-0909-01 7 kmpda0084ec dimensional outlines (unit: mm) s7170-0909 window 14.8 * 12.8 * 34.0 0.34 2.54 0.13 22.9 0.3 22.4 0.3 12.288 photosensitive area 12.288 2.4 0.15 3.4 0.44 4.0 0.44 4.8 0.49 photosensitive surface 1st pin indication pad 3.0 (24 ) 0.5 0.05 * size of window that guarantees the transmittance in the spectral transmittance characteristic of window material graph 13 24 1 12
ccd area image sensors s7170-0909, S7171-0909-01 kmpda0279eb S7171-0909-01 kmpda0279eb * size of window that guarantees the transmittance in the spectral transmittance characteristic of window material graph. values in parentheses indicate reference value. 50 0.3 2.0 0.3 (42) (4) 19 0.2 3.0 0.2 22.4 0.3 34.0 0.34 19 0.4 1 0.2 5.0 0.4 27.94 0.13 22.9 0.3 2.54 0.13 0.5 0.07 window 19.1 0.13 photosensitive area 12.288 16 0.13 * 7.78 0.79 0.6 0.1 13 24 112 0.5 +0.05 -0.03 photosensitive surface te-cooler 1 pin indication pad 8
ccd area image sensors s7170-0909, S7171-0909-01 9 speci ? cations of built-in te-cooler (S7171-0909-01) pin connections parameter symbol condition min. typ. max. unit internal resistance rint ta=25 c - 2.1 - : maximum current * 17 imax tc * 18 =th * 19 =25 c - - 2.0 a maximum voltage vmax tc * 18 =th * 19 =25 c - - 4.2 v maximum heat absorption * 20 qmax - - 4.5 w maximum temperature of heat radiating side - - - 70 c * 17: if the current greater than this value ows into the thermoelectric cooler, the heat absorption begins to decrease due to the joule heat. it should be noted that this value is not the damage threshold value. to protect the thermoelectric cooler and maintain stable operation, the supply current should be less than 60 % of this maximum current. * 18: temperature of the cooling side of thermoelectric cooler * 19: temperature of the heat radiating side of thermoelectric cooler * 20: this is a theoretical heat absorption level that offsets the temperature difference in the thermoelectric cooler when the m aximum current is supplied to the unit. pin no. s7170-0909 S7171-0909-01 remark (standard operation) symbol function symbol function 1 rd reset drain rd reset drain +12 v 2 os output transistor source os output transistor source r l =22 k : 3 od output transistor drain od output transistor drain +20 v 4 og output gate og output gate +3 v 5 sg summing gate sg summing gate same pulse as p2h 6- - 7- - 8 p2h horizontal shift register clock-2 p2h horizontal shift register clock-2 9 p1h horizontal shift register clock-1 p1h horizontal shift register clock-1 10 ig2h test point (horizontal input gate-2) ig2h test point (horizontal input gate-2) -8 v 11 ig1h test point (horizontal input gate-1) ig1h test point (horizontal input gate-1) -8 v 12 ish test point (horizontal input source) ish test point (horizontal input source) connect to rd 13 tg * 16 transfer gate tg * 16 transfer gate same pulse as p2v 14 p2v vertical shift register clock-2 p2v vertical shift register clock-2 15 p1v vertical shift register clock-1 p1v vertical shift register clock-1 16 - th1 thermistor 17 - th2 thermistor 18 - p- te-cooler- 19 - p+ te-cooler+ 20 ss substrate (gnd) ss substrate (gnd) gnd 21 isv test point (vertical input source) isv test point (vertical input source) connect to rd 22 ig2v test point (vertical input gate-2) ig2v test point (vertical input gate-2) -8 v 23 ig1v test point (vertical input gate-1) ig1v test point (vertical input gate-1) -8 v 24 rg reset gate rg reset gate * 16: isolation gate between vertical register and horizontal register. in standard operation, tg should be applied the same puls e as p2v.
ccd area image sensors s7170-0909, S7171-0909-01 10 voltage vs. current ccd temperature vs. current 0 1 2 3 voltage (v) ccd temperature (c) 4 6 5 -30 2.0 1.5 1.0 current (a) 0.5 0 -20 -10 0 10 20 30 (typ. ta=25 c) (typ. ta=25 c) 10 k 220 240 260 temperature (k) resistance 280 300 100 k 1 m specifications of built-in temperature sensor (S7171-0909-01) a thermistor chip is built in the same package with a ccd chip, and the ccd chip temperature can be monitored with it. a relati on between the thermistor resistance and absolute temperature is expressed by the following equation. r t1 = r t2 exp b t1/t2 (1/t1 - 1/t2) r t1 : resistance at absolute temperature t1 [k] r t2 : resistance at absolute temperature t2 [k] b t1/t2 : b constant [k] the characteristics of the thermistor used are as follows. r 298 =10 k : b 298/323 =3450 k kmpdb0180ea kmpdb0111ea
ccd area image sensors s7170-0909, S7171-0909-01 11 multichannel detector heads (c7180, c7181) features designed for back-thinned ccd area image sensor c7180: for non-cooled type (s7170-0909) c7181: for te-cooled type (S7171-0909-01) choice of line binning operation/area scanning operation operates with simple input signals built-in driver circuit high uv sensitivity and high quantum efficiency compact configuration highly stable temperature controller (c7181) cooling temperature: fixed at ts=-10 0.05 c precaution for use (electrostatic countermeasures) element cooling/heating temperature gradient rate o handle these sensors with bare hands or wearing cotton gloves. in addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. o avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. o provide ground lines or ground connection with the work- oor, work-desk and work-bench to allow static electricity to discharge. o ground the tools used to handle these sensors, such as tweezers and soldering irons. it is not always necessary to provide all the electrostatic measures stated above. implement these measures according to the am ount of damage that occurs. when using an external cooler, the element cooling/heating temperature gradient rate should be set at less than 5 k/min. ac cable (100 to 240 v; included with the c7557-01 ) pc (windows 2000/xp/vista) c7557-01 usb cable (included with the c7557-01) image sensor + multichannel detector head (usb 2.0) shutter timing pulse * dedicated cable (included with the c7557-01) * shutter, etc. are not available. te control i/o signal i/o power trig. kaccc0402ea connections to multichannel detector head and pc
ccd area image sensors s7170-0909, S7171-0909-01 cat. no. kmpd1028e10 may 2011 dn www.hamamatsu.com hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184 u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 8152- 375-0, fax: (49) 8152-265-8 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv?gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8 -509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese, (milano), italy, telephone: (39) 02-935-81- 733, fax: (39) 02-935-81-741 information described in this material is current as of may, 2011. product specifications are subject to change without prior n otice due to improvements or other reasons. before assembly into final products, please contact us for the delivery specification sheet to check the latest information. type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(x)" which means preliminary specifications or a suffix "(z)" which means developmental specifications. the product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovere d and reported to us within that one year period. however, even if within the warranty period we accept absolutely no liability for any loss caused by natural d isasters or improper product use. copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. 12 connection example ac cable (100 to 240 v; included with the c7557-01 ) pc (windows 2000/xp/vista) c7557-01 usb cable (included with the c7557-01) image sensor + multichannel detector head (usb 2.0) shutter timing pulse * dedicated cable (included with the c7557-01) * shutter, etc. are not available. te control i/o signal i/o power trig. kaccc0402ea multichannel detector head controller c7557-01 features for control of multichannel detector head and data acquisition easy control and data acquisition using supplied software via usb interface

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